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Electronic Raman Scattering On Individual Semiconducting Single Walled Carbon Nanotubes
文献类型:期刊
作者:Chen, Xi[1]  Zhu, Bairen[2]  Zhang, Anmin[3]  Zeng, Hualing[4]  Zhang, Qingming[5]  Cui, Xiaodong[6]  
机构:[1]Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.;
[2]Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.;
[3]Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.,Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China.;
[4]Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.;Chinese Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.;
[5]Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.,Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China.;
[6]Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.;
通讯作者:Cui, XD (reprint author), Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.
期刊名称:SCIENTIFIC REPORTS影响因子和分区
年:2014
卷:4
页码:5969
收录情况:SCI(E)(WOS:000340032600005)  PubMed(25095891)  
ISSN:2045-2322
所属部门:物理学系
摘要:We report experimental measurements of electronic Raman scattering by electrons (holes) in individual single-walled carbon nanotubes (SWNTs) under resonant conditions. The Raman scattering at low frequency range reveals a single particle excitation feature. And the dispersion of electronic structure around the center of Brillouin zone of a semiconducting SWNT (14, 13) is extracted.
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