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Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
文献类型:期刊
作者:Chang, Kai[1]  Liu, Junwei[2]  Lin, Haicheng[3]  Wang, Na[4]  Zhao, Kun[5]  Zhang, Anmin[6]  Jin, Feng[7]  Zhong, Yong[8]  Hu, Xiaopeng[9]  Duan, Wenhui[10]  Zhang, Qingming[11]  Fu, Liang[12]  Xue, Qi-Kun[13]  Chen, Xi[14]  Ji, Shuai-Hua[15]  
机构:[1]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[2]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;MIT, Dept Phys, Cambridge, MA 02139 USA.;
[3]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[4]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[5]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[6]Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China.;
[7]Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China.;
[8]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[9]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[10]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[11]Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China.;Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.;
[12]MIT, Dept Phys, Cambridge, MA 02139 USA.;
[13]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[14]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;
[15]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.;RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan.;
通讯作者:Chen, X; Ji, SH (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.; Chen, X; Ji, SH (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China.; Ji, SH (reprint author), RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan.
期刊名称:SCIENCE影响因子和分区
年:2016
卷:353
期:6296
页码:274-278
收录情况:SCI(E)(WOS:000379580800045)  PubMed(27418506)  
ISSN:0036-8075
所属部门:物理学系
摘要:
Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T-c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temp ...More
学科:综合性期刊
重要成果类型:重要期刊
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