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Electron delocalization in gate-tunable gapless silicene
文献类型:期刊
作者:Zhang, Yan-Yang[1]  Tsai, Wei-Feng[2]  Chang, Kai[3]  An, X.T.[4]  Zhang, G.P.[5]  Xie, X.C.[6]  Li, Shu-Shen[7]  
机构:Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.;Peking Univ, ICQM, Beijing 100871, Peoples R China.;Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.;Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.
通讯作者:Tsai, WF (reprint author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.
期刊名称:PHYSICAL REVIEW B影响因子和分区
年:2013
卷:88
期:12
收录情况:SCI(E)(WOS:000324953800003)  
ISSN:1098-0121
所属部门:物理学系
摘要:
The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonmagnetic impurities is highly suppressed by time-reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant ...More
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